Input/output circuit and input/output device

ABSTRACT

An input/output circuit has an output terminal, a first transistor, a second transistor, a pulse generator, and a bias circuit. The first transistor drives the output terminal based on a predetermined signal. The second transistor controls a potential of the gate of the first transistor. The pulse generator outputs a pulse with a predetermined time width when a level of the predetermined signal changes. The bias circuit generates a bias voltage for controlling the second transistor when the pulse is outputted, and impressing the bias voltage to the gate of the second transistor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of application Ser. No.11/164,479 filed on Nov. 24, 2005, which is hereby incorporated for allpurposes.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an input/output circuit and aninput/output device, which in particular are capable of impressing intoan output terminal an external power supply voltage which is higher thanan operation voltage, and have a tolerant function which pulls an outputpotential up to the level of the external power supply voltage.

2. Description of the Background Art

In recent years, as semiconductor integrated circuits have turned torequire less power, technology which makes the semiconductor integratedcircuits require less voltage is being pursued. However, in connectingdifferent semiconductor integrated circuits which operate with differentpower supply voltage (i.e. with different signal level), thesemiconductor integrated circuit operating with the lower power supplyvoltage may not be able to endure the influence of the semiconductorintegrated circuit operating with the higher power supply voltage, as aresult of which the semiconductor integrated circuit operating with thelower power supply voltage may be damaged. For example, if asemiconductor integrated circuit which operates with a power supplyvoltage of 3.3 V (hereinafter referred to as 3V system semiconductorintegrated circuit) and a semiconductor integrated circuit whichoperates with a power supply voltage of 5 V (hereinafter referred to as5V system semiconductor integrated circuit) are connected, the 3V systemsemiconductor integrated circuit may be damaged by the influence of the5V system semiconductor integrated circuit.

In order to cope with such problem, in the conventional art, it has beencommon for an input/output circuit which is capable of impressing anexternal power supply voltage that is higher than an internal powersupply voltage, or an input/output circuit which is capable of pullingthe power supply voltage up to the level of the external power supplyvoltage that is higher than the internal power supply voltage, to beused as a signal interface with respect to a semiconductor integratedcircuit on the lower voltage side.

Such input/output circuit is disclosed in Japanese Laid Open PatentApplication No. 9-139087 (hereinafter to be referred to as patentreference 1) and Japanese Laid Open Patent Application No. 2002-280892(hereinafter to be referred to as patent reference 2), for instance. Ina prior art input/output circuit as introduced by the patent references1 and 2, a first p-channel MOS (metal oxide semiconductor) transistor(hereinafter to be referred to as P-MOS transistor) for pull-up and afirst n-channel MOS transistor (hereinafter to be referred to as N-MOStransistor) for pull-down are connected in series, and to thisconnecting part, an output pad is connected. Between the gate of thefirst P-MOS transistor and the output pad, a switch of a second P-MOStransistor is connected. On the other hand between the drain of thefirst N-MOS transistor and the output pad, a second N-MOS transistor forreducing a voltage impressed between the source and drain of the firstN-MOS transistor is connected.

In this structure, when an external voltage which is higher than aninternal power supply voltage is impressed to the output pad, forinstance, the second P-MOS transistor will be turned on. Through thisoperation, the second P-MOS transistor will function as an outputtransistor. At this time, the first P-MOS transistor will be turned offas the gate potential of the first P-MOS transistor becomes the externalvoltage, and therefore, current flow from the output pad toward the sideof the internal power supply voltage can be prevented. In addition, evenwhen a voltage surpassing a withstand pressure of the first N-MOStransistor is impressed to the output pad, it is possible to prevent thefirst N-MOS transistor from being damaged by the voltage impressed tothe output pad because the voltage impressed between the source anddrain of the first N-MOS transistor is being reduced by the second N-MOStransistor.

In the prior art input/output circuit as described above, when theexternal voltage which is higher than the internal power supply voltageis impressed, current will flow into a node connected to the gate of thefirst P-MOS transistor via the second P-MOS transistor having theinternal power supply voltage being impressed to its gate. Due to suchoperation, this node, i.e. the gate of the first P-MOS transistor, willbe pulled up to the level of the external voltage and the first P-MOStransistor will be turned off. Thereby, a current path from the outputpad to the side of the internal power supply voltage will be shut off.

In such structure, however, if, for instance, in a normal operation, anexternal power supply voltage surpassing the internal power supplyvoltage is impressed to the output pad while the first P-MOS transistoris being turned on, it takes a while until the first P-MOS transistorturned off. In other words, the first P-MOS transistor will continue tobe turned on until the gate potential of the first P-MOS transistor ispulled up to the level of the external power supply voltage, whichresults in having components which charge the gate of the first P-MOStransistor and components which flow into the side of the internal powersupply voltage via the first P-MOS transistor incorporated in thecurrent from the external power supply voltage. Therefore, it will taketime to have the gate potential of the first P-MOS transistor pulled upby the time the first P-MOS transistor is turned off (i.e. steps willoccur in the pull-up waveform), which leads to a problem of increasingpower consumption.

In view of the above, it will be apparent to those skilled in the artfrom this disclosure that there exists a need for an improvedinput/output circuit and an improved input/output device. This inventionaddresses this need in the art as well as other needs, which will becomeapparent to those skilled in the art from this disclosure.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to resolve theabove-described problems, and to provide an input/output circuit and aninput/output device, which are capable of preventing an increase inpower consumption.

In accordance with a first aspect of the present invention, aninput/output circuit has an output terminal, a first transistor, asecond transistor, a pulse generator, and a bias circuit. The firsttransistor drives the output terminal based on a predetermined signal.The second transistor controls a potential of the gate of the firsttransistor. The pulse generator outputs a pulse with a predeterminedtime width when a level of the predetermined signal changes. The biascircuit generates a bias voltage for controlling the second transistorwhen the pulse is outputted, and impressing the bias voltage to the gateof the second transistor.

In accordance with a second aspect of the present invention, aninput/output circuit has an output terminal, a first transistor, asecond transistor, a bias circuit, and a third transistor. The firsttransistor drives the output terminal based on a predetermined signal.The second transistor controls a potential of the gate of the firsttransistor. The bias circuit generates a bias voltage for controllingthe second transistor based on the level of the predetermined signal,and impressing the bias voltage to the gate of the second transistor.The third transistor switches a voltage which is impressed to the gateof the second transistor based on a potential of the output terminal.

In accordance with a third aspect of the present invention, aninput/output circuit has an input terminal for signal, a firsttransistor, a second transistor, and a bias circuit. The firsttransistor is connected to the input terminal. The second transistordrives the gate of the first transistor. The bias circuit generates abias voltage for controlling the second transistor based on apredetermined voltage, and impressing the bias voltage to the gate ofthe second transistor.

In accordance with a fourth aspect of the present invention, aninput/output circuit has a first circuit and a second circuit. The firstcircuit has an output terminal, a first transistor driving the outputterminal based on a predetermined signal, a second transistorcontrolling a potential of the gate of the first transistor, a pulsegenerator outputting a pulse with a predetermined time width when alevel of the predetermined signal changes, and a first bias circuitgenerating a first bias voltage for controlling the second transistorwhen the pulse is outputted, and impressing the first bias voltage tothe gate of the second transistor. The second circuit has a signal inputterminal, a third transistor connected to the input terminal, a fourthtransistor driving the gate of the third transistor, and a second biascircuit generating a second bias voltage for controlling the fourthtransistor based on a predetermined voltage, and impressing the secondbias voltage to the gate of the fourth transistor.

In accordance with another aspect of the present invention, aninput/output device has a first circuit and a second circuit. The firstcircuit has an output terminal, a first transistor driving the outputterminal based on a predetermined signal, a second transistorcontrolling a potential of the gate of the first transistor, a pulsegenerator outputting a pulse with a predetermined time width when alevel of the predetermined signal changes, and a first bias circuitgenerating a first bias voltage for controlling the second transistorwhen the pulse is outputted, and impressing the first bias voltage tothe gate of the second transistor. The second circuit has a signal inputterminal, a third transistor connected to the input terminal, a fourthtransistor driving the gate of the third transistor, and a second biascircuit generating a second bias voltage for controlling the fourthtransistor based on a predetermined voltage, and impressing the secondbias voltage to the gate of the fourth transistor. The first and secondcircuits are formed in a predetermined semiconductor chip.

These and other objects, features, aspects, and advantages of thepresent invention will become apparent to those skilled in the art fromthe following detailed description, which, taken in conjunction with theannexed drawings, discloses preferred embodiments of the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

Referring now to the attached drawings which form a part of thisoriginal disclosure:

FIG. 1 is a circuit diagram showing a structure of a tristate outputcircuit 1 according to a first embodiment of the present invention;

FIG. 2 is a diagram showing signal waves inside a one-shot pulsegeneration circuit in the tristate output circuit 1 according to thefirst embodiment of the present invention;

FIG. 3 is a circuit diagram showing a structure of a tristate outputcircuit 2 according to a second embodiment of the present invention;

FIG. 4 is a circuit diagram showing a structure of a tristate outputcircuit 3 according to a third embodiment of the present invention;

FIG. 5 is an equivalent circuit diagram showing a structure of ainteractive circuit 4 according to a fourth embodiment of the presentinvention;

FIG. 6 is an equivalent circuit diagram showing a structure of ainteractive circuit 5 according to a fifth embodiment of the presentinvention; and

FIG. 7A and FIG. 7B are diagrams showing examples of how a semiconductorinput/output device 9 according to a sixth embodiment of the presentinvention is used.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Selected embodiments of the present invention will now be explained withreference to the drawings. It will be apparent to those skilled in theart from this disclosure that the following descriptions of theembodiments of the present invention are provided for illustration onlyand not for the purpose of limiting the invention as defined by theappended claims and their equivalents.

First Embodiment

A first embodiment of the present invention will be described withreference to the drawings. With respect to this embodiment, a tristateoutput circuit will be shown as an example of an input/output circuitaccording to the present invention. A tristate output circuit is capableof having an external power supply voltage higher than an operationvoltage impressed to an output terminal, and it has a tolerant functionwhich allows an output potential to be pulled up to the level of theexternal power supply voltage. This tristate output circuit is an outputinterface.

Structure

FIG. 1 is a circuit diagram showing a structure of a tristate outputcircuit 1 according to the first embodiment of the present invention. Asshown in FIG. 1, the tristate output circuit 1 has a one-shot pulsegeneration circuit 10 (pulse generator), an OE/PAD potential judgingcircuit 20, a bias circuit 30, a floating well charging circuit 40, atransfer gate 50, a two-input NAND circuit 61, an inverter 62, atwo-input NOR circuit 63, a p-type MOS transistor (hereinafter to bereferred to as P-MOS transistor) 64 (second transistor), a P-M05transistor 65 (first transistor), an n-type MOS transistor (hereinafterto be referred to as N-MOS transistor) 66 (third transistor), an N-MOStransistor 67 (fourth transistor), and a resistor 68. In this tristateoutput circuit 1, an input signal a inputted to an input terminal A isoutputted to an output pad PADo (output terminal).

Note that the tristate output circuit 1 includes a structure whichauthorizes or unauthorizes output based on an output enable signal(predetermined signal) oe. For example, if an H level enable signal oe(i.e. in this case, a signal which enables output) is inputted to aninput terminal OE, the tristate output circuit 1 will output an inputsignal a inputted to the input terminal A to the output pad PADo (outputauthorized). On the other hand, if an L level enable signal oe (i.e. inthis case, a signal which disenables output) is inputted to the inputterminal OE, the tristate output circuit 1 will hold the output under anindefinite state, i.e. a high impedance state (hereinafter to bereferred to as high impedance state), and shut off output from theoutput pad PADo (output unauthorized).

Now, the structure of the tristate output circuit 1 will be described inmore detail. As shown in FIG. 1, the input terminal A is connected withone of the two inputs of the two-input NAND circuit 61 and one of thetwo inputs of the two-input NOR circuit 63, which are connected in aninput stage of the tristate output circuit 1, respectively. To the otherone of the two inputs of the two-input NAND circuit 61 the inputterminal OE is connected. Therefore, the two-input NAND circuit 61 willoutput L level only when the input signal a and the enable signal oe areboth at H level. An output of the two-input NAND circuit 61 is connectedto the gate of the P-MOS transistor 65, which is formed in an outputstage of the tristate output circuit 1, through the transfer gate 50described below.

To the other one of the two inputs of the two-input NOR circuit 63, theinput terminal OE is connected through the inverter 62. Therefore, thetwo-input NOR circuit 63 will output H level only when the input signala is at L level and the enable signal oe is at H level (i.e. the outputfrom the inverter 62 is at L level). An output of the two-input NORcircuit 63 is connected to the gate of the N-MOS transistor 67 which isformed in the output stage of the tristate output circuit 1.

In the output stage of the tristate output circuit 1, the P-MOStransistor 65 and the N-MOS transistor 67 are connected. As mentionedabove, the output of the two-input NAND circuit 61 is connected to thegate of the P-MOS transistor 65 through the transfer gate 50, and theoutput of the two-input NOR circuit 63 is connected to the gate of theN-MOS transistor 67. The P-MOS transistor 65 and the N-MOS transistor 67are transistors for driving the output pad PADo.

Now the operation of the P-MOS transistor 65 and the N-MOS transistor 67will be described in detail. When the enable signal oe and the inputsignal a are both at H level, L level, which is outputted from thetwo-input NAND circuit 61, will be impressed to the gate of the P-MOStransistor 65 via the transfer gate 50. Thereby, the P-MOS transistor 65will be turned on, and the output pad PADo and a power supply line(hereinafter to be referred to as internal power supply VDDIO) to whichan internal power supply voltage VDDIO is impressed will beshort-circuited, which results in bringing a potential of the output padPADo to H level. At this time, since L level is being outputted from thetwo-input NOR circuit 63, the N-MOS transistor 67 is being turned off.In addition, the internal power supply voltage is an operationalpotential for making the transistors operate normally.

On the other hand, when the enable signal oe is at H level and the inputsignal a is at L level, H level, which is outputted from the two-inputNOR circuit 63, will be impressed to the gate of the N-MOS transistor67. Thereby, the N-MOS transistor 67 will be turned on, and the outputpad PADo will be grounded via the N-MO5 transistors 66 and 67, whichresults in bringing the potential of the output pad PADo to L level. Atthis time, since H level is being outputted from the two-input NANDcircuit 61, the P-MOS transistor 65 is being turned off.

Moreover, when the enable signal be is at L level, the two-input NANDcircuit 61 will output H level and the two-input NOR circuit 63 willoutput L level. Thereby, the P-MOS transistor 65 and the N-MOStransistor 67 will be turned off, and the output pad PADo will be underthe high impedance state.

A floating well potential (hereinafter to be referred to as wellpotential) of the P-MOS transistor 65, i.e. a backgate potential, ischarged up to the level of the VDDIO or the external power supplyvoltage (VTT) by the floating well charging circuit 40 described below.In this description, it will be assumed that the internal power supplyvoltage VDDIO is 3.3 V (volt) and the external power supply voltage VTTis 5 V, for example,

To the gate of the N-MOS transistor 66 (q.v. FIG. 1) connected betweenthe N-MOS transistor 67 and the ground, the internal power supplyvoltage VDDIO is constantly being impressed. In other words, the N-M05transistor 66 is always being turned on.

This N-MOS transistor 66 functions as a protection element forpreventing possible damages to the N-MOS transistor 67. Therefore, theN-MOS transistor 66 is a circuit element which enables one of thetolerant functions according to this embodiment, which is to allowimpression of the external power supply voltage VTT.

For example, if the external power supply voltage VTT (5 V) higher thanthe internal power supply voltage VDDIO (3.3 V) is impressed to theoutput pad PADo, a potential difference between the external powersupply voltage VTT and the ground potential (i.e. the external powersupply voltage VTT=5 V) will be directly impressed to between the drainand source of the N-MOS transistor 67, and there may be a possibilitythat the N-MOS transistor 67 may not be able to endure this potentialdifference and may be damaged.

In order to resolve this problem, as shown in FIG. 1, the N-MOStransistor 66, which is kept constantly turned on, is connected betweenthe output pad PADo and the N-MOS transistor 67. By this arrangement,the voltage impressed to the drain of the N-MOS transistor 67 willbecome equal to a voltage impressed to the gate of the N-MOS transistor66 from which a threshold voltage Vthn is subtracted. Thereby, itbecomes possible to prevent the potential difference between the outputpad PADo and the ground from being directly impressed to between thedrain and source of the N-MOS transistor 67, and therefore prevent theN-MOS transistor 67 from being damaged.

Furthermore, as shown in FIG. 1, the enable signal oe inputted from theinput terminal OE is also inputted to the one-shot pulse generationcircuit 10. The one-shot pulse generation circuit 10 functions as ameans to output a pulsed signal (corresponding to a pulse signal oe5 oroe-5 described below) with a predetermined time width, at the time whenthe enable signal oe changes from H level to L level.

This one-shot pulse generation circuit 10, as shown in FIG. 1, includesan inverter 11 (first inverter), an odd number (three in FIG. 1) ofinverters 12, 13 and 14 (second inverters), two-input NAND circuit 15,and an inverter 16 (third inverter). The number of inverters (inverters12 to 14 in FIG. 1) connected in series between the inverter 11 and thetwo-input NAND circuit 15 is a factor which decides a time width of thepulse signals oe 5 and oe-5. The number of these inverters is notlimited to three as in FIG. 1, but can be changed according to thesituation. However, in this embodiment, since the one-shot pulsegeneration circuit 10 generates the pulse signal oe5 using the two-inputNAND circuit 15, the number of the second inverters has to be an oddnumber.

The inverter 11 in the one-shot pulse generation circuit 10 is connectedin an input stage of the one-shot pulse generation circuit 10. Theenable signal oe inputted from the input terminal OE is first inputtedto the input of the inverter. 11. The output of the inverter 11 isbranched into two. One branch is connected to one of the two inputs ofthe two-input NAND circuit 15 connected in an output stage of theone-shot pulse generation circuit 10, and the other branch is connectedto the other one of the two inputs of the two-input NAND circuit 15through the inverters 12, 13 and 14.

Waveforms of the enable signal oe inputted to the one-shot pulsegeneration circuit 10, signals oe1, oe2, oe3, and oe4 which theinverters 11, 12, 13 and 14 output, respectively, and the pulse signaloe5 which the two-input NAND circuit 15 outputs are shown in FIG. 2.

As shown in FIG. 2, for instance, the enable signal oe changing from Hlevel to L level is inputted from the input terminal CE. The enablesignal oe represents a signal state in changing the output from anenable state to a disenable state. This enable signal oe is inverted atthe inverter 11 (q.v. signal oe1 in FIG. 2) and outputted as the signaloe1 to the inverter 12 and to one of the two inputs of the two-inputNAND circuit 16.

Note that a signal which passes through the inverter 11 is forced to bedelayed. In the following description of the operation, a signal whichpasses through the inverters 12, 13 and 14 is also to be delayed. Here,delay time of each of the inverters 11, 12, 13 and 14 is to be assumedas tdi. While taking this into consideration, as shown in FIG. 2, an upedge of the signal oe1 is delayed from a down edge of the enable signaloe by the delay time tdi. Likewise, since a signal passing through theinverters 12, 13 and 14 is to be delayed due to circuit factors, a downedge of the signal oe2 is delayed from the up edge of the signal oe1 bythe delay time tdi, an up edge of the signal oe3 is delayed from thedown edge of the signal oe2 by the delay time tdi, and a down edge ofthe signal oe4 is delayed from the up edge of the signal oe3 by thedelay time tdi.

As a result, the signal oe4 having its down edge delayed from the upedge of the signal oei, which is inputted to one of the two inputs ofthe two-input NAND circuit 15, by 3×tdi will be inputted to the otherone of the two inputs of the two-input NAND circuit 15. In other words,the signal oe4 will be inputted to the two-input NAND circuit 15 with adelay of 3×tdi from the signal oe1.

In order to take a logical product of the signal oe1 and the signal oe4,the two-input NAND circuit 15 outputs the pulse signal oe5 having a timewidth (3×tdi) corresponding to the total delay time (q.v. FIG. 2).However, the two-input NAND circuit 15 itself causes a delay due tocircuit factors, and if this delay time is assumed as tda, a down edgeof the pulse signal oe5 is delayed from the up edge of the signal oe1 bythe delay time tda, and an up edge of the pulse signal oe5 is delayedfrom an up edge of the signal oe4 by the delay time tda (q.v. FIG. 2).

Now, turning back to FIG. 1, a circuit structure will be described. Thepulse signal oe5 outputted from the two-input NAND circuit 15 of theone-shot pulse generation circuit 10 is inputted to the OF/PAD potentialjudging circuit 20 directly, and at the same time, the pulse signal oe5is inverted at the inverter 16 and then inputted to the OF/PAD potentialgeneration circuit 20.

Details of this structure are as follows. The output of the two-inputNAND circuit 15, which is connected in the output stage of the one-shotpulse generation circuit 10, is branched into two. One branch isconnected to one of the two inputs of a two-input NOR circuit 24 in theOE/PAD potential judging circuit 20, and at the same time to the gate ofa P-MOS transistor 22 a which is one constituent of a clocked inverter22 in the OF/PAD potential judging circuit 20. In other words, the pulsesignal oe5 is inputted to one of the two inputs of the two-input NORcircuit 24 in the OF/PAD potential judging circuit 20 and to a controlterminal (i.e. the gate) of the P-MOS transistor 22 a which controls theoperation of the clocked inverter 22, respectively.

On the other hand, the other branch passes through the inverter 16, andthen it is connected to the gate of an N-MOS transistor 22 d which isone constituent of the clocked inverter 22 in the OE/PAD potentialjudging circuit 20, and at the same time to the gate of a P-MO5transistor 23 in the OF/PAD potential judging circuit 20. In otherwords, the inverted pulse signal oe5 (hereinafter to be referred to aspulse signal −oe5) is inputted to a control terminal (i.e. the gate) ofthe N-MOS transistor 22 d, which controls the operation of the clockedinverter 22, and to a control terminal (i.e. the gate) of the P-MOStransistor 23, which serves to input the internal power supply voltageVDDIO to the other one of the two inputs of the two-input NOR circuit 24at the time when the clocked inverter 22 is non-operating, respectively.

The OE/PAD potential judging circuit 20, to which the pulse signal oe5and the pulse signal −oe5 are inputted in a way just described, servesas a means (i.e. a potential judgment output circuit) to judge thepotential of the output pad PADo while the pulse signals oe5 and −oe5are outputted, i.e. when a signal level of the enable signal oe ischanged, and to output a voltage for outputting a bias voltage Vbiasfrom a bias circuit 30 (which will be described below) on the basis ofits judging result.

As shown in FIG. 1, this OE/PAD potential judging circuit 20 includes anN-MOS transistor 21, the clocked inverter 22, the P-MOS transistor 23,the two-input NOR circuit 24 and an inverter 25.

The N-MOS transistor 21 connected in an input stage of the OE/PADpotential judging circuit 20 has the internal power supply voltage VDDIOconstantly impressed to its gate. In other words, the N-MOS transistor21 is always being turned on. The source of the N-MOS transistor 21 isconnected to the output pad PADo via the resistor 68. The drain of theN-MOS transistor 21 is connected to the gate of a P-MOS transistor 22 band the gate of an N-MOS transistor 22 c, which are components of theclocked inverter 22 located in a rear stage when looking from the outputpad PADo, respectively.

This N-MOS transistor 21 serves as a protection element which inparticular prevents the N-MOS transistor 22 c in the clocked inverter 22from being damaged. Therefore, the N-MOS transistor 22 is a circuitelement which enables one of the tolerant functions according to thisembodiment, which is to allow impression of the external power supplyvoltage VTT.

Although the clocked inverter 22 monitors the potential of the outputpad PADo through the resistor 68, especially when the potential of theoutput pad PADo becomes the external power supply voltage VTT (5 V)which is higher than the internal power supply voltage VDDIO (3.3 V),this potential of the output pad PADo may be directly impressed to thegate of the N-MOS transistor 22 c, and it may be possible that the N-MOStransistor 22 c may be damaged for not being able to endure theinfluence of the external power supply voltage VTT, as in the case ofthe above-described N-MOS transistor 67.

In order to resolve this problem, as shown in FIG. 1, the N-MOStransistor 21, which is kept constantly turned on, is connected betweenthe output pad PADo and the clocked inverter 22. By this arrangement,the so-called Vt dropping will occur at the N-MOS transistor 21, and thepotential impressed to the gate of the N-MOS transistor 22 c will becomeequal to the gate potential of the N-MOS transistor 21 (the internalpower supply voltage VDDIO in this case) from which the thresholdvoltage Vthn is subtracted, i.e. the potential impressed to the gate ofthe N-MOS transistor 22 c will become VDDIO−Vthn, which is lower thanthe external voltage VTT impressed to the output pad PADo.

In this way, by having the N-MOS transistor 21, it becomes possible toprevent the potential of the output pad PADo from being directlyimpressed to the gate of the N-MOS transistor 22 c, and thereforeprevent the N-MQS transistor 22 from being damaged.

Furthermore, the clocked inverter 22 connected in the OE/PAD potentialjudging circuit 20 functions as a means to monitor the potential of theoutput pad PADo, as described above, and to operate the bias circuit 30based on the monitoring result. As shown in FIG. 1, this clockedinverter 22 has a structure in which the P-MOS transistors 22 a and 22 band the N-MOS transistors 22 c and 22 d are connected in series betweenthe internal power supply voltage VDDIO and the ground.

In this embodiment, although the clocked inverter 22 has been describedas having four transistors (i.e. two P-MOS transistors 22 a and 22 b andtwo N-MOS transistors 22 c and 22 d) being connected in series betweenthe internal power supply voltage VDDIO and the ground, the presentinvention is not limited to this. According to the present invention,the clocked inverter 22 will do as long as it has a structure wherethere are three or more transistors including at least one P-MOStransistor and one N-MOS transistor connected in series between theinternal power supply voltage VDDIO and the ground. In this case, theoutput of the two input NAND circuit 15 or the inverter 16 is connectedto the gate of the transistors except for a pair of P-MOS transistor andN-MOS transistor which monitor the output pad PADo, and thereby a linebetween the internal power supply voltage VDDIO and the ground is shutoff except during the period when the pulse signal oe5 or −oe5 isoutputted.

In the clocked inverter 22, the gates of the P-MOS transistor 22 b andthe NMOS transistor 22 c, of which drains are connected to each other,are connected to the output pad PADo via the N-MOS transistor 21 and theresistor 68. The source of the P-MOS transistor 22 b is connected to theinternal power supply voltage VDDIO via the P-MOS transistor 22 a. Thegate of the P-MO5 transistor 22 a is connected to the output of thetwo-input NAND circuit 15 in the one-shot pulse generation circuit 10.In other words, the P-MOS transistor 22 a will be turned on only whenthe pulse signal oe5 is inputted.

The source of the N-MOS transistor 22 c is grounded via the N-MOStransistor 22 d. The gate of the N-MOS transistor 22 d is connected tothe output of the inverter 16 in the one-shot pulse generation circuit10. This means that the N-MOS transistor 22 d will be turned on onlywhen the pulse signal −oe5 is inputted.

By this structure, the clocked inverter 22 will operate only when thepulse signals oe5 and −oe5 are inputted and the internal power supplyvoltage VDDIO and the ground are connected, and thus monitor thepotential of the output pad PADo. In this description, the time when thepulse signal oe5 is inputted/outputted indicates a period from the downedge to the up edge of the pulse signal oe5 shown in FIG. 2. Likewise,the time when the pulse signal −oe5 is inputted/outputted indicates aperiod from the up edge to the down edge of the pulse signal −oe5.

If the potential of the output pad PADo is at L level when the pulsesignals oe5 and −oe5 are inputted, the clocked inverter 22 inputs theinternal power supply voltage VDDIO to the other one of the two inputsof the two input NOR circuit 24 via the P-MOS transistors 22 a and 22 b.On the other hand, if the potential of the output pad PADo is at H levelwhen the pulse signals oe5 and −oe5 are inputted, the clocked inverter22 inputs the ground potential to the other one of the two inputs of thetwo input NOR circuit 24 via the N-MOS transistors 22 c and 22 d.

The output of the clocked inverter 22, i.e. the drains of the P-MOStransistor 22 b and the N-MOS transistor 22 c, is connected to the drainof the P-MOS transistor 23 and the other one of the two inputs of thetwo-input NOR circuit 24. The gate of the P-MO5 transistor 23 isconnected to the output of the inverter 16 in the one-shot pulsegeneration circuit 10. Accordingly, the P-MOS transistor is turned ononly when the pulse signal −oe5 is not inputted, and thereby itimpresses the internal power supply voltage VDDIO to the other one ofthe two inputs of the two-input NOR circuit 24.

In this way, to the other one of the two inputs of the two-input NORcircuit 24 in the OE/PAD potential judging circuit 20, while the pulsesignals oe5 and −oe5 are outputted, the output from the clocked inverter22, i.e. the result of monitoring the output pad PADo, is inputted, andwhile the pulse signals oe5 and −oe5 are not outputted, the internalpower supply voltage VDDIO is inputted. Therefore, the two-input NORcircuit 24 outputs H level during the period in which the pulse signalsoe5 and −oe5 are outputted and the potential of the output pad PADo isat H level (i.e. the internal power supply voltage VDDIO or the externalpower supply voltage VTT, in this case), and other than this period, thetwo-input NOR circuit 24 outputs L level.

The output of the two-input NOR circuit 24 in the OE/PAD potentialjudging circuit 20 is connected to the gates of N-MOS transistors 31 and32 in the bias circuit 30 (which will be described below), and the gatesof a P-MOS transistor 34 and a P-MOS transistor 35 a (which is oneconstituent of a transfer gate 35, which will be described below).

The output of the inverter 25, to which the output of the two-input NORcircuit 24 in the OE/PAD potential judging circuit 20 is inputted, isconnected to the gates of N-MOS transistors 33 e, 33 f and 33 g in thebias circuit 30, and the gate of a P-MOS transistor 35 b in the transfergate 35 in the bias circuit 30.

As described above, the bias circuit 30 receives two outputs, i.e. theoutput from the two-input NOR circuit 24 and the output from theinverter 25. This bias circuit 30 functions as a means to generate abias voltage Vbias for controlling the P-MOS transistor 65 disposed inthe output stage of the tristate output circuit 1 and impress this biasvoltage Vbias to the gate of the P-MOS transistor 64, i.e. to a node pg(q.v. FIG. 1), during the period in which the pulse signals oe5 and −oe5are outputted from the one-shot pulse generation circuit 10. The P-MOStransistor 64 having its gate connected to the output of this biascircuit 30 functions as a means to control the potential of the node pgconnected to the gate of the P-MOS transistor 65 based on the biasvoltage Vbias received from the bias circuit 30 and thus pull thepotential of the node pg up to the level of the potential of the outputpad PADo.

As shown in FIG. 1, the bias circuit 30 includes N-MOS transistors 31,32, and 33 a to 33 g, the P-MOS transistor 34, and the transfer gate 35.The P-MOS transistor 64 has its gate connected to the output of the biascircuit 30, i.e. to a node bias (q.v. FIG. 1), its drain connected tothe output pad PADo via the resistor 68, and its source connected to thegate of the P-MOS transistor 65 via the node pg.

The N-MOS transistors 31 and 33 a to 33 d in the bias circuit 30 areserially connected in N stages (N=5 in FIG. 1) in between the internalpower supply voltage VDDI and the ground. That is, the N-MOS transistor31 has its source connected to the internal power supply voltage VDDIOand its drain connected to the drain of the N-MOS transistor 33 a. Thesource of the N-MOS transistor 33 a is connected to the drain of theN-MOS transistor 33 b, the source of the N-MOS transistor 33 b isconnected to the drain of the N-MOS transistor 33 c, and the source ofthe N-MOS transistor 33 c is connected to the drain of the N-MOStransistor 33 d. The gate of each of the N-MOS transistors 33 a to 33 cis connected to the drain of each of the N-MOS transistors 33 a to 33 c.The source and gate of the N-MOS transistor 33 d are grounded.

In the following, the structure made up of the N-MOS transistors 31 and33 a to 33 d is to be referred to as a vertical structure. In thisvertical structure, the drains of the N-MOS transistors 31 and 33 afunction as output terminals.

The output terminals of the vertical structure in the bias circuit 30,i.e. the drain of the N-MOS transistor 31 and the drain and gate of theN-MOS transistor 33 a, are also connected to the drain of the N-MOStransistor 33 e. The N-MOS transistor 33 e has its source grounded andits gate connected to the output of the inverter 25 in the OE/PADpotential judging circuit 20. The source of the N-MOS transistor 33 aand the drain and gate of the N-MOS transistor 33 b are connected to thedrain of the N-MOS transistor 33 f. The N-MOS transistor 33 f has itssource grounded and its gate connected to the output of the inverter 25in the OE/PAD potential judging circuit 20. The source of the N-MO5transistor 33 b and the drain and gate of the N-MOS transistor 33 c areconnected to the drain of the N-MOS transistor 33 g. The N-MOStransistor 33 g has its source grounded and its gate connected to theoutput of the inverter 25 in the QE/PAD potential judging circuit 20.

In this structure, the N-MOS transistors 33 e to 33 g are controlled tobe turned on or off on the basis of the output from the inverter 25 inthe OE/PAD potential judging circuit 20. The N-MOS transistors 33 a to33 d are controlled to be turned on or off in a way following the on oroff turning of the N-MOS transistors 33 e to 33 g.

The output terminals of the vertical structure in the bias circuit 30,i.e. the drain of the N-MOS transistor 31 and the drain and gate of theN-MOS transistor 33 a, are also connected to the source of the N-MOStransistor 32. The drain of the N-MOS transistor 32 is connected to thegate of the P-MOS transistor 64 via the node bias. The gate of the N-MOStransistor 32 is connected to the output of the two-input NOR circuit 24in the OE/PAD potential judging circuit 20. The gate of the N-MOStransistor 31 in the vertical structure is also connected to the outputof the two-input NOR circuit 24 in the OE/PAD potential judging circuit20.

In addition, to the source of the N-MOS transistor 34 in the biascircuit 30, the internal power supply voltage VDDIO is impressed. Thedrain of the N-MOS transistor 34 is connected to the gate of the P-MOStransistor 64 via the transfer gate 35, which includes the P-MOStransistor 35 a and the N-MOS transistor 35 b, and the node bias.

To the gate of the P-MOS transistor 34 and the gate of the P-MOStransistor 35 a in the transfer gate 35, the output of the two-input NORcircuit 24 in the OE/PAD potential judging circuit 20 is connected. Tothe gate of the N-MOS transistor 35 b in the transfer gate 35, theoutput of the inverter 25 in the OE/PAD potential judging circuit 20.

In this structure, when L level is outputted from the two-input NORcircuit 24 while H level is outputted from the inverter 25, i.e. whenthe pulse signal −oe5 is not outputted and/or the potential of theoutput pad PADo is at L level, the P-MOS transistor 34, the transfergate 35 and the N-MOS transistors 33 e to 33 g are turned on, and theN-MOS transistors 31, 32 and 33 a to 33 d are turned off. Thereby, theinternal power supply voltage VDDIO having been impressed to the sourceof the P-MOS transistor 34 is impressed to the gate of the P-MO5transistor 64 via the P-MOS transistor 34, the transfer gate 35 and thenode bias.

On the other hand, when H level is outputted from the two-input NORcircuit 24 while L level is outputted from the inverter 25, i.e. whenthe pulse signals oe5 and −oe5 are outputted and the potential of theoutput pad PADo is at H level (i.e. the internal power supply voltageVDDIO or the external power supply voltage VTT), or in more concreteterms when the potential of the output pad PADo is at H level and theenable signal oe is changed to L level, the N-MOS transistors 31, 32 and33 a to 33 d are turned on and the P-MOS transistor 34, the transfergate 35 and the N-MOS transistors 33 e to 33 g are turned off. Thereby,the bias voltage Vbias is generated on the basis of the internal powersupply voltage VDDIO having been impressed to the source of the P-MOStransistor 31, and this bias voltage Vbias is impressed to the gate ofthe P-MOS transistor 64 via the node bias.

However, the voltage having passed through the N-MOS transistors 31 and32 in the bias circuit 30, i.e. the bias voltage Vbias outputted duringthe period in which the pulse signals oe5 and −oe5 are outputted and thepotential of the output pad PADo is at H level (i.e. the internal powersupply voltage VDDIO or the external power supply voltage VTT), will bedecreased due to the threshold voltage Vthn of these N-MOS transistors31 and 32. Accordingly, the bias voltage Vbias will become the voltageimpressed to the source of the N-MOS transistor 31, i.e. the voltageobtained by subtracting the threshold voltage Vthn of the N-MOStransistors 31 and 32 from the internal power source voltage VDDIO (i.e.VDDIO−2Vthn). Therefore, to the gate of the P-MOS transistor 64, thebias voltage Vbias (i.e. VDDIO−2Vthn) which is lower than the internalpower supply voltage VDDIO by twice the threshold voltage Vthn will beimpressed via the node bias. Thereby, the P-MOS transistor 64 will be ina state that can pass electric current more smoothly. In other words, itbecomes possible to increase the amount of current flowing into theP-MOS transistor 64. As a result, the potential of the node pg, i.e. thegate potential of the P-MOS transistor 65, can be immediately pulled upto the level of the external power supply voltage VTT impressed to theoutput pad PADo.

The floating well charging circuit 40 shown in FIG. 1 functions as ameans to charge floating wells of the P-MOS transistors 51, 64 and 65formed on a floating well substrate. As shown in FIG. 1, this floatingwell charging circuit 40 includes three P-MOS transistors 41, 42 and 43.

The gate of the P-MOS transistor 41 in the floating well chargingcircuit 40 is connected to the output pad PADo via the resistor 68.Therefore, to the gate of the P-MOS transistor 41, the potential of theoutput pad PADo is impressed. To the source of the P-MOS transistor 41,the internal power supply voltage VDDIO is impressed. To the drain ofthe P-MOS transistor 41, back gates (also called floating wells) of theP-MOS transistors 41, 42 and 43, and back gates of the P-MOS transistors51 and 65 are connected.

The sources of the P-MOS transistors 42 and 43 in the floating wellcharging circuit 40 are connected to the output pad PADo via theresistor 68. To the gate of the P-MOS transistor 42, the internal powersupply voltage VDDIO is impressed. On the other hand, the drain of theP-MOS transistor 42 is connected to the drains and back gates of theP-MOS transistors 41, 42 and 43, and the back gates of the P-MOStransistors 51 and 65. Therefore, to the gate of the P-MOS transistor42, well potentials of the P-MOS transistors 41, 42, 43, 51, 64 and 65are impressed.

In this structure, for instance, if the potential of the output bad PADois at L level, the P-MOS transistor 41 in the floating well chargingcircuit 40 will be turned on and the electric charge will flow into thewell from the internal power supply voltage VDDIO, by which the wellpotentials of the P-MOS transistors 41, 42, 43, 51 and 65 will be pulledup to VDDIO level. At this time, the internal power supply voltage VDDIOis impressed to the gate of the P-MOS transistor 42 in the floating wellcharging circuit 40, and since the well potential is fed back to thegate of the P-MOS transistor 43, there should be no current flowing outtoward the output pad PADo through the P-MOS transistors 42 and 43. Thenat the point when the well potential becomes VDDIO, the P-MOS transistor41 will be turned off, and charging will be finished.

On the other hand, if, for instance, the potential of the output badPADo is at H level (i.e. VDDIO level), the P-MOS transistor 41 in thefloating well charging circuit 40 will be turned off while the P-MOStransistor 43 will be turned on instead, and the electric charge willflow into the well from the output pad PADo, by which the wellpotentials of the P-MOS transistors 41, 42, 43, 51 and 65 will be pulledup to VDDIO level. At this time, since the internal power supply voltageVDDIO is impressed to the gate of the P-MOS transistor 42 in thefloating well charging circuit 40, there should be no current flowingout toward the output pad PADo through the P-MOS transistor 42. Then atthe point when the well potential becomes VDDIO, the P-MOS transistors41, 42 and 43 will all be turned off, and charging will be finished.

Moreover, if, for instance, the potential of the output bad PADo is atVTT level, which is higher than the internal power supply voltage VDDIO,the P-MOS transistor 41 in the floating well charging circuit 40 will beturned off while the P-MOS transistors 42 and 43 will be turned oninstead, and the electric charge will flow into the well from the outputpad PADo, by which the well potentials of the P-MOS transistors 41, 42,43, 51, 64 and 65 will be pulled up. At this time, since the potentialof the output pad PADo is impressed to the gate of the P-MOS transistor41 via the resistor 68 and the drain of the P-MOS transistor 41 followsthe uprise of the well potential, the P-MOS transistor 41 stays beingturned off. Accordingly, there should be no current flowing out towardthe power supply voltage VDDIO via the P-MOS transistor 41.

Then at the point when the well potential becomes VDDIO, the P-MOStransistor 42 will be turned off. However, since the P-MOS transistor43, to which gate the well potential is fed back, is still being turnedon, the floating well will be charged up to the potential of the outputpad PADo (i.e. up to VTT). By operating in this way, no path by whichcurrent flows out to the internal power supply voltage VDDIO should beformed, and it should become possible to swiftly pull the well potentialup to the level of the external power supply voltage VTT. Then at thepoint when the well potential becomes VDDIO, the P-MOS transistors 41,42 and 43 in the floating well charging circuit 40 will all be turnedoff, and charging will be finished.

The transfer gate 50 shown in FIG. 1 functions as a means to lead orshut off connection between the output of the two-input NAND circuit 61and the gate of the P-MOS transistor 65. As shown in FIG. 1, thistransfer gate 50 includes a P-MOS transistor 51 and an N-MOS transistor52.

The drain of the P-MOS transistor 51 and the source of the N-MOStransistor 52 are commonly connected to the output of the two-input NANDcircuit 61. The source of the P-MOS transistor 51 and the drain of theN-MOS transistor 52 are connected to the source of the P-MOS transistor64 and the gate of the P-MOS transistor 65. The P-MO5 transistor 51 hasits gate connected to the output pad PADo via the resistor 68 and itsback gate connected to the floating well charging circuit 40, asdescribed above. To the gate of the P-MOS transistor 52, the internalpower supply voltage VDDIO is impressed.

In this structure, for instance, if the input signal a is at H level andthe enable signal oe is at H level, i.e. if the outputs of the two-inputNAND circuit 61 and the two-input NOR circuit 63 are both at L level,the node pg (i.e. the gate of the P-MOS transistor 65) will become Llevel via the N-MOS transistor 52 in the transfer gate 50. At this time,the well potentials (back gate potentials) of the P-MOS transistors 51,64 and 65 should be charged to VDDIO by the floating well chargingcircuit 40.

On the other hand, if, for instance, the input signal a is at L leveland the enable signal oe is at H level, i.e. if the outputs of thetwo-input NAND circuit 61 and the two-input NOR circuit 63 are both at Hlevel, the node pg (i.e. the gate of the P-MOS transistor 65) willbecome H level (i.e. VDDIO level) via the N-MOS transistor 51 in thetransfer gate 50. At this time, the well potentials of the P-MOStransistors 51, 64 and 65 should be charged to VDDIO by the floatingwell charging circuit 40.

Moreover, if, for instance, the enable signal oe is at L level, i.e. ifthe output of the two-input NOR circuit 63 is at L level and the outputof the two-input NAND circuit 61 is at H level, the output pad PADoshould be under the indefinite state (i.e. the high impedance state),but at this time, if the output pad PADO is at VTT level which is higherthan the internal power supply voltage VDDIO, the node pg (i.e. the gateof the P-MOS transistor 65) should be charged to VTT level. This isbecause the bias voltage Vbias is impressed to the gate of the P-MOStransistor 64 due to the bias circuit 30 operating on the basis of thepulse signals oe5 and −oe5 outputted from the one-shot pulse generationcircuit 10 when the enable signal oe is changing into L level, andthereby current is made to flow from the output pad PADo to the node pgvia the resistor 68 and the P-MOS transistor 64.

At this time, since the well potential of the P-MOS transistor 51 in thetransfer gate 50 is at VTT, the P-MOS transistor 51 should be turned offat the point when the potential of the node pg becomes VTT. In addition,the well potential of the P-MOS transistor 64 should be charged to VTTby the floating well charging circuit 40.

In this way, since the well potential becomes VTT and the drainpotential becomes VTT (i.e. the external power supply voltage VTTimpressed to the output pad PADo), the P-MOS transistor 51 in thetransfer gate 50 should be turned off at the point when the sourcepotential, i.e. the potential of the node pg, becomes VTT.

In the above case, if the output pad PADo is at L level or VDDIO level,the node pg (i.e. the gate of the P-MOS transistor 65) should be chargedto VDDIO level via the transfer gate 50 or the P-MOS transistor 64.

Operation

Now the operation of the tristate output circuit 1 according to thefirst embodiment of the present invention will be described. In thefollowing, two particular cases are shown as examples. Case 1 shows theoperation of the tristate output circuit 1 when the external powersupply voltage VTT is impressed to the output pad PADo via a pull-upresistor (not shown) as the enable signal oe changes from H level to Llevel. Case 2 shows the operation of the tristate output circuit 1 whenthe output pad PADo becomes a middle potential while the enable signaloe is at L level. Note that the middle potential is not limited to halfthe potential of VDDIO. It is appropriate as long as it is a potentialwithin the range that can have the P-MOS transistor (e.g. 22 b inFIG. 1) and the NMOS transistor (e.g. 22 c in FIG. 1), which monitor thepotential of the output pad PADo, turned on at the same time.

Case 1

First, the operation of the tristate output circuit 1 when the externalpower supply voltage VTT is impressed to the output pad PADo via apull-up resistor (not shown) as the enable signal oe changes from Hlevel to L level will be described.

In the initial state of this operation, the enable signal oe is at Hlevel. At this point, for instance, if the input signal a is at H level,the output of the two-input NAND circuit 61 should be at L level and theoutput of the two-input NOR circuit 63 should be at L level.Furthermore, if the potential of the output pad PADo is at H level (i.e.at VDDIO level), the two-input NOR circuit 24 in the OE/PAD potentialjudging circuit 20 will output L level, and the inverter 25 will outputH level. Therefore, to the gate of the P-MOS transistor 64, the internalpower supply voltage VDDIO from the bias circuit 30 will be impressed.

Here, the well potential of the P-MOS transistor 64 is pulled up toVDDIO level by the floating well charging circuit 40. Therefore, theP-MOS transistor 64 will be in a state of being turned off after havingthe source potential, i.e. the node pg, pulled up to VDDIO level.

At this point, when the enable signal oe changes from H level to Llevel, the output of the two-input NAND circuit 61 will become H level.Thereby, H level is impressed to the gate of the P-MOS transistor 65 viathe transfer gate 50, and thus the output pad PADo will become under theindefinite state (i.e. the high impedance state). In this description ofthe operation, a case in which the external power supply voltage VTT isimpressed to the output pad PADo via a pull-up resistor (not shown), atthis point, will be shown as an example. That is, a case in which thepotential of the output pad PADo becomes VTT will be shown.

When the above-mentioned enable signal oe changes from H level to Llevel, the one-shot pulse generation circuit 10 operates in a waydescribed with reference to FIG. 2 to output the pulse signals oe5 and−oe5. Thereby, the OE/PAD potential judging circuit 20 operatestemporarily to monitor the potential of the output pad PADo. In moreconcrete terms, since the potential of the output pad PADo is at VTT(>VDDIO), H level is outputted from the two-input NOR circuit 24 in theOE/PAD potential judging circuit 20 and L level is outputted from theinverter 25 while the pulse signals oe5 and −oe5 are outputted.

In this way, as H level is outputted from the two-input NOR circuit 24in the OE/PAD potential judging circuit 20 and L level is outputted fromthe inverter 25, the N-MOS transistors 31 and 32 in the bias circuit 30will be turned on. At this time, the N-MOS transistors 33 a to 33 d willalso be turned on. Thereby, the bias voltage Vbias (i.e. VDDIO −2Vthn)which is lower than the internal power supply voltage VDDIO by twice thethreshold voltage Vthn will be impressed to the node bias.

At this time, the well (i.e. the back gate) of the P-MOS transistor 64is charged to VTT level via the floating well charging circuit 40.Therefore, the P-MOS transistor 64 having the bias voltage Vbias (i.e.VDDIO −2Vthn) which is lower than the internal power supply voltageVDDIO impressed to its gate will be in a state that can pass electriccurrent more smoothly as compared with the case when the VDDIO isimpressed to its gate. Accordingly, current will flow immediately to thenode pg through the resistor 68 and the P-MOS transistor 64. Thereby,the potential of the node pg, i.e. the gate potential of the P-MOStransistor 65, can be immediately pulled up to VTT level. As a result,the gate potential, the back gate potential and the drain potential(corresponding to the potential of the output pad PADo) of the P-MOStransistor 65 will all become VTT, and the P-MOS transistor 65 will beturned off. Thereby, the current pass between the output pad PADo andthe internal power supply voltage VDDIO will be shut off, and willbecome possible to prevent current from flowing from the output pad PADoto the internal power supply voltage VDDIO via the P-MOS transistor 65.This means that it is possible to prevent an increase in powerconsumption.

In addition, at the point when the potential of the node pg becomes VTTlevel, the source potential, the drain potential and the well potentialof the P-MOS transistor 64 will all become VTT level, by which the P-MOStransistor 64 will be turned off.

After that, as a period of time, which corresponds with thepredetermined time width of the pulse signals oe5 and −oe5, passes, i.e.as it becomes a state that pulse signals oe5 and −oe5 are not outputted,L level will be outputted from the output of the two-input NAND circuit24 in the OE/PAD potential judging circuit 20 and H level will beoutputted from the inverter 25, and thus the internal power supplyvoltage VDDIO will be outputted from the bias circuit 30. This internalpower supply voltage VDDIO will be impressed to the gate of the P-MOStransistor 64. Accordingly, at this time, for instance, even if thepotential of the output pad PADo becomes the middle potential, the P-MOStransistor 64 will stay being turned off. Thereby, it will becomepossible to prevent current from flowing from the internal power supplyvoltage VDDIO impressed to the two-input NAND circuit 61 toward theoutput pad PADo via the transfer gate 50, the P-MOS transistor 64 andthe resistor 68. This means that it is possible to prevent an increasein power consumption.

Case 2

Next, the operation of the tristate output circuit 1 when the output padPADo becomes a middle potential while the enable signal oe is at Llevel, will be described.

In this operation, since the output of the two-input NAND circuit 61 isat H level and the output of the two-input NOR circuit 63 is at L level,the output pad PADo is under the indefinite state (i.e. the highimpedance state). In this description of the operation, a case in whichthe potential of the output pad PADo becomes half the potential of VDDIO(i.e. middle potential), at this point, will be shown as an example.

The middle potential impressed to the output pad PADo is impressed tothe gates of the P-MOS transistor 22 b and the N-MOS transistor 22 c,which constitute the clocked inverter 22 in the OE/PAD potential judgingcircuit 20, via the resistor 68 and the N-MOS transistor 21 in theOE/PAD potential judging circuit 20. Thereby, the P-MOS transistor 22 band the N-MOS transistor 22 c will be turned on at the same time.

In this embodiment, however, as described earlier, only when the enablesignal oe is changing to L level the pulse signals oe5 and −oe5 areoutputted from the one-shot pulse generation circuit 10 and the clockedinverter 22 is supposed to operate. Therefore, even when the P-MOStransistor 22 b and the N-MOS transistor 22 c are turned on at the sametime due to the middle potential, the P-MOS transistor 22 a and theN-MO5 transistor 22 d will be turned off while the pulse signals oe5 and−oe5 are not outputted. Therefore, in this period, there will be nothrough current passing between the internal power supply voltage VDDIOand the ground via the clocked inverter 22, i.e. the P-MOS transistors22 a and 22 b and the P-MOS transistors 22 c and 22 d. Thereby anincrease in power consumption can be prevented.

In addition, the middle potential as just mentioned is also impressed tothe drain of the P-MO5 transistor 64 via the resistor 68. In thisembodiment, however, while the pulse signals oe5 and −oe5 are notoutputted, the internal power supply voltage VDDIO outputted from thebias circuit 30 is supposed to be impressed to the gate of the P-MOStransistor 64. Moreover, at this time, the floating well chargingcircuit 40 is supposed to charge the well of the P-MOS transistor 64 upto the internal power supply voltage VDDIO. Therefore, even when themiddle potential is impressed to the drain of the P-MOS transistor 64,the P-MOS transistor 64 will not be turned on and as a result, no DCcurrent will flow into the output pad PADo via the P-MOS transistor 64and the resistor 68. Thereby an increase in power consumption can beprevented.

As described above, according to the first embodiment of the presentinvention, the one-shot pulse generation circuit 10 is connected betweenthe input terminal OF and one of the two inputs of the two-input NORcircuit 24, which is the input of the OE/PAD potential judging circuit20, and when the potential of the output pad PADo becomes higher thanthe internal power supply voltage VDDIO (i.e. when it becomes VTT) whilethe pulse signals oe5 and −oe5 are outputted from this one-shot pulsegeneration circuit 10, the bias circuit 30 operates to have a voltage(i.e. bias voltage Vbias=VDDIO −2Vthn) which is lower than the internalpower supply voltage VDDIO impressed to the gate of the P-MOS transistor64. With this structure, when the enable signal oe changes to L level,the gate potential of the P-MOS transistor 65 connected between theoutput pad PADo and the internal power supply voltage VDDIO can beimmediately pulled up to the level of the external power supply voltageVTT through the resistor 68 and the P-MOS transistor 64. Thereby, it ispossible to prevent current from flowing from the output pad PADo to theside of the internal power supply voltage VDDIO via the P-MOS transistor65 at the time of pull-up, and therefore, it is possible to prevent anincrease in power consumption.

Furthermore, in this embodiment of the present invention, the biascircuit 30 operates only while the pulse signals oe5 and −oe5 areoutputted from the one-shot pulse generation circuit 10. That is, inthis period, the bias voltage Vbias (=VDDIO −2Vthn) for allowing theP-MOS transistor 64 to let current pass more smoothly is impressed tothe gate of the P-MOS transistor 64 by the bias circuit 30, and when thepulse signals oe5 and −oe5 are not outputted from the one-shot pulsegeneration circuit 10, the internal power supply voltage VDDIO isimpressed to the gate of the P-MOS transistor 64. With this structure,even when the potential of the output pad PADo becomes the middlepotential for instance, after the output pad PADo turned to theindefinite state, as long as it is within the period in which the pulsesignals oe5 and −oe5 are not outputted, the P-MOS transistor 64 to whichgate the internal power supply voltage VDDIO is impressed will not beturned on. Therefore, even in such circumstances, it is possible toprevent a current pass from being formed between the internal powersupply voltage VODIO to the output pad PADo via the two-input NANDcircuit 61, the transfer gate 50, P-MOS transistor 64 and the resistor68. In other words, it is possible to prevent current from flowing outto the output pad PADo. As a result, an increase in power consumptioncan be prevented.

In addition, according to this embodiment of the present invention, theOE/PAD potential judging circuit 20 uses the clocked inverter 22 whichoperates only while the pulse signals oe5 and −oe5 are outputted fromthe one-shot pulse generation circuit 10 to monitor the potential of theoutput pad PADo. With this structure, even when the potential of theoutput pad PADo becomes the middle potential for instance, there will beno through current passing between the internal power supply voltageVDDIO and the ground via the clocked inverter 22. Thereby, an increasein power consumption can be prevented.

Furthermore, according to this embodiment of the present invention, theN-MOS transistor 66 and the N-MOS transistor 21 for allowing Vt droppingto occur are connected between the output pad PADo and the N-MOStransistor 67 and between the output pad PADo and the gate of theclocked inverter 22, respectively. With this structure, even when thepotential of the output pad PADo becomes the external power supplyvoltage VTT which is higher than the internal power supply voltageVDDIO, the N-MOS transistor 67 which drives the potential of the outputpad PADo and the clocked inverter 22 which monitors the potential of theoutput pad PADo will not be damaged.

Second Embodiment

Next, a second embodiment of the present invention will be describedwith reference to the drawings. In the following, as for the structurethat are the same as the first embodiment, the same reference numberswill be used, and redundant explanations of those structure elementswill be omitted.

In this embodiment, a tristate output circuit 2 which has a structure ofanother tristate output circuit 1 of the first embodiment of the presentinvention will be described.

Structure

FIG. 3 is a circuit diagram showing a structure of a tristate outputcircuit 2 according to the second embodiment of the present invention.As shown in FIG. 3, the tristate output circuit 2 has a bias circuit 30,a floating well charging circuit 40, a transfer gate 50, a two-inputNAND circuit 61, inverters 62, 72 and 73, a two-input NOR circuit 63, aP-MOS transistor 64 (second transistor), a P-MOS transistor 65 (firsttransistor), a P-MOS transistor 71 (third transistor), an N-MOStransistor 66 (fourth transistor), an N-MOS transistor 67 (fifthtransistor), and a resistor 68. In this tristate output circuit 2, aninput signal a inputted to an input terminal A is outputted to an outputpad PADo (output terminal). In addition, as in the first embodiment, thetristate output circuit 2 includes a structure which authorizes orunauthorizes output based on an output enable signal oe.

The bias circuit 30, the floating well charging circuit 40, the transfergate 50, the two-input NAND circuit 61, the inverter 62, the two-inputNOR circuit 63, the P-MOS transistors 64 and 65, the N-MOS transistors66 and 67, and the resistor 68 are the same as in the structure of thetristate output circuit 1 according to the first embodiment of thepresent invention, and redundant explanations thereof will be omitted.

In the tristate output circuit 2, the one-shot pulse generation circuit10 of the tristate output circuit 1 in the first embodiment is removed,the P-MOS transistor 71 having its gate connected to the output pad PADothrough the resistor 68 is added, and the OE/PAD potential judgingcircuit 20 is replaced with the two inverters 72 and 73 connected inseries.

In the above structure, the bias circuit 30 operates based on outputs ofthe inverters 72 and 73. In other words, the bias circuit 30 generates abias voltage Vbias for controlling the P-MOS transistor 64 based on asignal level of the enable signal oe, and impresses this bias voltage tothe gate of the P-MOS transistor 64.

Specifically, when the enable signal oe is at H level, i.e. in the statethat the output is authorized, the inverter 72 outputs L level and theinverter 73 outputs H level. The output of the inverter 72 is connectedto the gates of the N-MOS transistors 31 and 32 in the bias circuit 30,the gate of the P-MOS transistor 34, and the gate of the P-MOStransistor 35 a in the transfer gate 35, respectively. The output of theinverter 73 is connected to the gates of the N-MOS transistors 33 e to33 g in the bias circuit 30 and the gate of the N-MOS transistor 35 b inthe transfer gate 35, respectively.

Accordingly, in the state that the output is authorized, as in the statethat the two-input NOR circuit 24 outputs L level and the inverter 25outputs H level in the first embodiment, the N-MOS transistors 31 and 32in the bias circuit 30 are turned off and the P-MOS transistor 34 andthe transfer gate 35 in the bias circuit 30 are turned on. Thereby, theinternal power supply voltage VDDIO is impressed to the node bias. Atthis time, the N-MOS transistors 33 e to 33 g are in the state of beingturned on. Therefore, the N-MOS transistors 33 a to 33 d are in thestate of being turned off.

On the other hand, when the enable signal oe is at L level, i.e. in thestate that the output is unauthorized, the inverter 72 outputs N leveland the inverter 73 outputs L level. Accordingly, in this state, as inthe state that the two-input NOR circuit 24 outputs H level and theinverter 25 outputs L level in the first embodiment, the P-MOStransistor 34 and the transfer gate 35 in the bias circuit 30 are turnedoff and the N-MOS transistors 31, 32 and 33 a to 33 d are turned on.Thereby, the bias voltage Vbias (=VDDIO −2Vthn) which is lower than theinternal power supply voltage VDDIO by twice of the threshold voltageVthn is impressed to the node bias.

In this way, according to this embodiment, while the enable signal oe isat L level, the bias circuit 30 continues to operate.

Moreover, the P-MOS transistor 71 in the tristate output circuit 2switches the potential of the node bias based on the potential of theoutput pad PADo. In the other words, the P-MOS transistor 71 functionsas a switch for switching the potential impressed to the gate of theP-MOS transistor 64 to either the bias voltage Vbias or the internalpower supply voltage VDDIO, based on the potential of the output padPADo.

The drain of the P-MOS transistor 71 is connected to the internal powersupply voltage VDDIO, and the source of the P-MOS transistor 71 isconnected to the node bias, i.e. the gate of the P-MOS transistor 64.The gate of the P-MOS transistor 71 is, as mentioned above, connected tothe output PADo through the resistor 68.

Furthermore, the back gate (also called the floating well) of the P-MOStransistor 71 is connected to the output of the floating well chargingcircuit 40. In other words, when the potential of the output pad PADo isbelow the internal power supply voltage VDDIO, the well potential of theP-MOS transistor 71 is charged to the level of VDDIO, and when thepotential of the output PADo is higher than the internal power supplyvoltage VDDIO, e.g. the potential of the output pad PADo is the externalpower supply voltage VTT, the well potential of the P-MOS transistor 71is charged to the level of VTT.

Accordingly, the P-MOS transistor 71 impresses the internal power supplyvoltage VDDIO to the node bias while the potential of the output padPADo is lower than the internal power supply voltage VDDIO. On the otherhand, the P-MOS transistor 71 turns off while the potential of theoutput pad PADo is higher than the internal power supply voltage VDDIO.

On the basis of the above factor, i.e. on the basis of the output of thebias circuit 30 and the output of the P-MOS transistor 71, in thisembodiment, the potential of the node bias becomes at the bias voltageVbias (=VDDIO −2Vthn) which is lower than the internal power supplyvoltage VDDIO while the enable signal oe is at L level and the potentialof the output pad PADo is higher than the internal power supply voltageVDDIO. In a period other than this, i.e. while the enable signal oe isat H level and/or the potential of the output pad PADo is lower than theinternal power supply voltage VDDIO, the potential of the node biasbecomes at the internal power supply voltage VDDIO.

Operation

Now the operation of the tristate output circuit 2 according to thesecond embodiment of the present invention will be described. In thefollowing, two particular cases are shown as examples. Case 1 shows theoperation of the tristate output circuit 2 when the external powersupply voltage VTT is impressed to the output pad PADo via a pull-upresistor (not shown) as the enable signal oe changes from H level to Llevel. Case 2 shows the operation of the tristate output circuit 2 whenthe output pad PADo becomes a middle potential while the enable signaloe is at L level.

Case 1

First, the operation of the tristate output circuit 2 when the externalpower supply voltage VTT is impressed to the output pad PADo via apull-up resistor (not shown) as the enable signal oe changes from Hlevel to L level will be described.

In the initial state of this operation, the inverter 72 outputs L level,and the inverter 73 outputs H level. Therefore, the internal powersupply voltage outputted from the bias circuit 30 is impressed to thegate of the P-MOS transistor 64.

Here, the well, potential of the P-MOS transistor 64 is pulled up toVDDIO level by the floating well charging circuit 40. Therefore, theP-MOS transistor 64 will be in a state of being turned off after havingthe source potential, i.e. the node pg, pulled up to VDDIO level.

At this point, when the enable signal oe changes from H level to Llevel, the output of the two-input NAND circuit 61 will become H level.Thereby, H level is impressed to the gate of the P-MOS transistor 65 viathe transfer gate 50, and thus the output pad PAD0 will become under theindefinite state (i.e. the high impedance state). In this description ofthe operation, a case in which the external power supply voltage VTT isimpressed to the output pad PADo via a pull-up resistor (not shown), atthis point, will be shown as an example. That is, a case in which thepotential of the output pad PADo becomes VTT will be shown.

As mentioned above, when the enable signal oe changes from H level to Llevel, the inverter 72 outputs H level and the inverter 73 outputs Llevel.

In this way, as H level is outputted from the inverter 72 and L level isoutputted from the inverter 73, the N-MOS transistors 31 and 32 in thebias circuit 30 will be turned on. At this time, the N-MOS transistors33 a to 33 d will also be turned on. Thereby, the bias voltage Vbias(i.e. VDDIO −2Vthn) which is lower than the internal power supplyvoltage VDDIO by twice the threshold voltage Vthn will be impressed tothe node bias.

Moreover, since the external power supply voltage VTT is impressed tothe gate of the P-MOS transistor 71 and the floating well (back gate) ischarged to the VTT level, the P-MOS transistor turns off. Accordingly,the potential of the node bias becomes the bias voltage Vbias (=VDDIO−2Vthn).

At this time, the well (i.e. the back gate) of the P-MOS transistor 64is charged to VTT level via the floating well charging circuit 40.Therefore, the P-MOS transistor 64 having the bias voltage Vbias (i.e.VDDIO −2Vthn) which is lower than the internal power supply voltageVDDIO impressed to its gate will be in a state that can pass electriccurrent more smoothly as compared with the case when the VDDIO isimpressed to its gate. Accordingly, current will flow immediately to thenode pg through the resistor 68 and the P-MOS transistor 64. Thereby,the potential of the node pg, i.e. the gate potential of the P-MOStransistor 65, can be immediately pulled up to VTT level. As a result,the gate potential, the back gate potential and the drain potential(corresponding to the potential of the output pad PAD0) of the P-MOStransistor 65 will all become VTT, and the P-MOS transistor 65 will beturned off. Thereby, the current pass between the output pad PADo andthe internal power supply voltage VDDIO will be shut off, and willbecome possible to prevent current from flowing from the output pad PADoto the internal power supply voltage VDDIO via the P-MOS transistor 65.This means that it is possible to prevent an increase in powerconsumption.

In addition, at the point when the potential of the node pg becomes VTTlevel, the source potential, the drain, potential and the well potentialof the P-MOS transistor 64 will all become VTT level, by which the P-MOStransistor 64 will be turned off.

After that, for instance, when the potential of the output pad PADo,becomes the middle potential, the P-MOS transistor 71 turns on. Thereby,the internal power supply voltage VDDIO is impressed to the node bias,i.e. the gate of the P-MOS transistor 64. Accordingly, as mentionedabove, even if the potential of the output pad PADo becomes the middlepotential, the P-MOS transistor 64 will stay being turned off. Thereby,it will become possible to prevent current from flowing from theinternal power supply voltage VDDIO impressed to the two-input NANDcircuit 61 toward the output pad PADo via the transfer gate 50, theP-MOS transistor 64 and the resistor 68. This means that it is possibleto prevent an increase in power consumption.

Case 2

Next, the operation of the tristate output circuit 2 when the output padPADo becomes a middle potential while the enable signal oe is at Llevel, will be described.

In this operation, since the output of the two-input NAND circuit 61 isat H level and the output of the two-input NOR circuit 63 is at L level,the output pad PADo is under the indefinite state (i.e. the highimpedance state). In this description of the operation, a case in whichthe potential of the output pad PADo becomes the middle potential, atthis point, will be shown as an example.

The middle potential impressed to the output pad PADo is impressed tothe gates of the P-MOS transistor 71 via the resistor 68. At this time,since the well potential of the P-MOS transistor 71 is pulled up toVDDIO level by the floating well charging circuit 40, the P-MOStransistor 64 is being turned on. Thereby, the internal power supplyvoltage VDDIO will be impressed to the node bias, i.e. the gate of theP-MOS transistor 64.

At this time, the floating well charging circuit 40 is supposed tocharge the well of the P-MOS transistor 64 up to the internal powersupply voltage VDDIO. Therefore, even when the middle potential isimpressed to the drain of the P-MOS transistor 64, the P-MOS transistor64 will not be turned on, and as a result, no DC current will flow intothe output pad PADo via the P-MOS transistor 64 and the resistor 68.Thereby, an increase in power consumption can be prevented.

As described above, according to the second embodiment of the presentinvention, when the potential of the output pad PADo becomes higher thanthe internal power supply voltage VDDIO (i.e. when it becomes VTT) whilethe enable signal oe is at L level, the bias circuit 30 operates to havea voltage (i.e. bias voltage Vbias=VDDIO −2Vthn) which is lower than theinternal power supply voltage VDDIO impressed to the gate of the P-MOStransistor 64. With this structure, as in the first embodiment, when theenable signal oe changes to 1 level, the gate potential of the P-MOStransistor 65 connected between the output pad PADo and the internalpower supply voltage VDDIO can be immediately pulled up to the level ofthe external power supply voltage VTT through the resistor 68 and theP-MOS transistor 64. Thereby, it is possible to prevent current fromflowing from the output pad PADo to the side of the internal powersupply voltage VDDIO via the P-MOS transistor 65 at the time of pull-up,and therefore, it is possible to prevent an increase in powerconsumption.

Furthermore, in this embodiment of the present invention, the biascircuit 30 operates only while the enable signal oe is at L level andthe potential of the output pad PADo is higher than the internal powersupply voltage VDDIO. That is, in this period, the bias voltage Vbias(=VDDIO−2Vthn) for allowing the P-MOS transistor 64 to let current passmore smoothly is outputted from the bias circuit 30, and when the enablesignal oe is at H level and/or the potential of the output pad PADo islower than the internal power supply voltage VDDIO, the internal powersupply voltage VDDIO outputted from the bias circuit 30 or the P-MOStransistor 71 is impressed to the gate of the P-MOS transistor 64. Withthis structure, when the potential of the output pad PADo becomes themiddle potential for instance, after the output pad PADo turned to theindefinite state, the internal power supply voltage VDDIO is impressedto the gate of the P-MOS transistor 64. Thereby, even when the potentialof the output pad PADo becomes the middle potential for instance, afterthe output pad PADo turned to the indefinite state, the P-MOS transistor64 will not be turned on. Therefore, even in such circumstances, it ispossible to prevent a current pass from being formed between theinternal power supply voltage VDDIO and the output pad PADo via thetwo-input NAND circuit 61, the transfer gate 50, P-MOS transistor 64 andthe resistor 68. In other words, it is possible to prevent current fromflowing out to the output pad PADo. As a result, an increase in powerconsumption can be prevented.

In addition, according to this embodiment of the present invention, thepotential of the output pad PADo is received at the gate of the C-MOS(Complementary Metal Oxide Semiconductor) such as an inverter or thelike. With this structure, even when the potential of the output padPADo becomes the middle potential for instance, there will be no throughcurrent passing between the internal power supply voltage VDDIO and theground via the C-MOS such as an inverter. Thereby, an increase in powerconsumption can be prevented.

Furthermore, according to this embodiment of the present invention, theN-MOS transistor 66 for allowing Vt dropping to occur is connectedbetween the output pad PADo and the N-MOS transistor 67. With thisstructure, even when the potential of the output pad PADo becomes theexternal power supply voltage VTT which is higher than the internalpower supply voltage VDDIO, the N-MOS transistor 67 which drives thepotential of the output pad PADo will not be damaged.

In addition, according to this embodiment of the present invention, thetristate output circuit which realizes the above effects is realizablewith a small number of circuit elements. For instance, the tristateoutput circuit 2 according to this embodiment realizes the same effectas the tristate output circuit 1 in the first embodiment with a smallernumber of circuit elements.

Third Embodiment

Next; a third embodiment of the present invention will be described withreference to the drawings. In the following, as for the structure thatare the same as the first embodiment or the second embodiment, the samereference numbers will be used, and redundant explanations of thosestructure elements will be omitted.

In this embodiment, a tolerant input circuit 3 which is an inputinterface (it is also an input/output circuit) constituted using thecircuit structure of the tristate output circuit 2 according to thesecond embodiment of the present invention will be described.

Structure

FIG. 4 is a circuit diagram showing a structure of a tolerant inputcircuit 3 according to the third embodiment of the present invention. Asshown in FIG. 4, the tolerant input circuit 3 has a bias circuit 30, afloating well charging circuit 40, a transfer gate 50, a two-input NANDcircuit 61, inverters 72, 73, 82 and 83, a two-input NOR circuit 63, aP-MOS transistor 64 (second transistor), a P-MOS transistor 65W (firsttransistor), a P-MOS transistor 71, an N-MOS transistor 66 (fourthtransistor), an N-MOS transistor 67 (fifth transistor), an N-MOStransistor 81 (third transistor), and a resistor 68. In this tolerantinput circuit 3, an input signal pad inputted to an input pad PADi(input terminal) is outputted to an output terminal Y.

The inverters 72 and 73, the bias circuit 30, the floating well chargingcircuit 40, the transfer gate 50 are the same as in the structure of thetristate output circuit 2 according to the second embodiment of thepresent invention.

More specifically, as in the case of the second embodiment, the biascircuit 30 in this embodiment has the N-MOS transistors 31, 32 and 33 ato 33 g, the P-MOS transistor 34 and the transfer gate 35. With thisstructure, the bias circuit 30 impresses the bias voltage Vbias to thenode bias based on the potential outputted from the inverters 72 and 73.In addition, in this embodiment, the input of the inverter 72 isconnected to the internal power supply voltage VDDIO instead of theinput terminal OE (shown in FIG. 1 or 3). Thereby, in this embodiment,the inverter 72 constantly outputs L level and the inverter 72constantly outputs H level. Accordingly, the bias circuit 30 constantlyimpresses the internal power supply voltage VDDIO to the node bias, i.e.the gate of the P-MOS transistor 64.

As the second embodiment, the floating well charging circuit 40 hasthree P-MOS transistor 41 to 43, and charges the back gates of the P-MOStransistors 64, 65W and 71 to VDDIO level or VTT level (>VDDIO level)which is the voltage level of the external power supply voltage VUimpressed to the input pad PADi.

As in the case of the second embodiment, in this embodiment, thetransfer gate 50 has the P-MOS transistor 51 and the N-MOS transistor52, and connects/disconnects between the output of the two-input NANDcircuit 61 and the gate of the P-MOS transistor 65W based on thepotential of the input pad PADi.

The rest structure of the tolerant input circuit 3 will be describednow. In the tolerant input circuit 3 according to this embodiment, asshown in FIG. 4, one input of the two-input NAND circuit 61 is connectedto the internal power supply voltage VDDIO instead of the input terminalA (shown in FIG. 1 or 3). The other input of the two-input NAND circuit61 is connected to the output of the inverter 82 which will describedbelow. Thereby, the two-input NAND circuit 61 outputs L level only whilethe output of the inverter 82 is at H level.

Furthermore, in the tolerant input circuit 3, the inverter 62 of thetristate output circuit 1 or 2 is removed, and one input of thetwo-input NAND circuit 63 is connected to the internal power supplyvoltage VDDIO instead of the output of the inverter 62 (shown in FIG. 1or 3). The other input of the two-input NAND circuit 63 is connected tothe inverter 82 which will be described below, as in the case of thetwo-input NAND circuit 61. However, since one input of the two-inputNAND circuit 63 is connected to the internal power supply voltage VDDIO,the two-input NAND circuit 63 constantly outputs L level.

As in the case of the first or second embodiment, in this embodiment,the output of the two-input NAND circuit 61 is connected to the gate ofthe P-MOS transistor 65W for driving the input pad PADi via the transfergate 50.

The P-MOS transistor 65W corresponds to the P-MOS transistor 65 in thefirst or second embodiment In addition, in this embodiment, the gatewidth of the P-MOS transistor 65W is narrower than the gate width of theP-MOS transistor 65 adopted in the first or second embodiment. Likewise,the gate length of the P-MOS transistor 65W is longer than the gatelength of the P-MOS transistor 65 adopted in the first or secondembodiment.

The gate width being narrow indicates that the P-MOS transistors abilityof passing current (i.e. a driving force) is low as compared with thecase in which the gate width is wide (in the case in which the same gatepotential is used). The gate length being long indicates that the P-MOStransistors driving force is low as compared with the case in which thegate length is short. That is, in this embodiment, a P-MOS transistor65W with a comparatively low driving force is used.

By using such P-MOS transistor 65W, it is possible to connect acomparatively large load between the internal power supply voltage VDDIOand the input pad PADi. Therefore, it is possible to reduce the amountof current flowing from the input pad PADI to the internal power supplyvoltage VDDIO via P-MOS transistor 65W and from the internal powersupply voltage VDDIO to the input pad PADi via P-MOS transistor 65W.

The two-input NOR circuit 6 is connected to the gate of the N-MOStransistor 67 for driving the input pad PADi, as in the case of thefirst or second embodiment.

In addition, as shown in FIG. 4, the input pad PADi is connected to theinput of the inverter 82 via the N-MOS transistor 81. In other words,the inverter 82 is connected between the input pad PADi and the outputterminal Y.

The internal power supply voltage VDDIO is constantly impressed to thegate of the N-MOS transistor 81 connected between the input pad PADi andthe inverter 82. That is, the N-MOS transistor 81 is constantly beingturned on. This N-MOS transistor 81 is a protective element especiallyfor N-MOS transistors of the inverter 82 which is provided in thesubsequent stage of the N-MOS transistor 82. In other words, the N-MOStransistor 82 is a circuit element for realizing the function thatenable the impression of the external power supply voltage VTT amongother tolerant functions in this embodiment.

Although the inverter 82 monitors the potential of the input pad PADithrough the resistor 68, especially when the potential of the input padPADi becomes the external power supply voltage VTT (5 V) which is higherthan the internal power supply voltage VDDIO (3.3 V), this potential ofthe input pad PADi may be directly impressed to the gate of the N-MOStransistor of the inverter 82, and it may be possible that the N-MOStransistor may be damaged for not being able to endure the influence ofthe external power supply voltage VTT as in the case of the abovedescribed N-MOS transistors 67 and 22 c.

In order to resolve this problem, as shown in FIG. 4, the N-MOStransistor 81, which is kept constantly turned on, is connected betweenthe input pad PADI and inverter 82. By this arrangement, Vt droppingwill occur at the N-MOS transistor 81, and the potential impressed tothe gate of the N-MOS transistor of the inverter 82 will become lowerthan the external voltage VTT impressed to the input pad PADi.

In this way, by having the N-MOS transistor 81, it becomes possible toprevent the potential of the input pad PADi from being directlyimpressed to the gate of the N-MOS transistor of the inverter 82, andtherefore prevent the inverter 82, especially the N-MOS transistor, frombeing damaged.

As mentioned above, the output of the inverter 82 connected in theoutput stage of the N-MOS transistor 81 is connected to the other inputof the two-input NAND circuit 61 and the other input of the two-inputNOR circuit 63, respectively. Therefore, the two-input NAND circuit 61outputs L level only when data inputted to the input pad PADi is at Hlevel (e.g. data ‘1’). On the other hand, the two-input NOR circuit 62outputs L level either when H level (e.g. data ‘1’) is inputted to theinput pad PADi or when L level (e.g. data ‘0’) is inputted to the inputpad PADI. Thereby, the N-MOS transistor 67 having its gate connected tothe output of the two-input NOR circuit 63 is constantly being turnedoff.

Moreover, the output of the inverter 82, i.e. the data inputted to theinput pad PADi, is outputted from the output terminal Y after beingreturned to the original data by passing the inverter 83.

Since the rest of the structure is the same as the first or the secondembodiment detailed description thereof will be omitted.

Operation

Now the operation of the tolerant input circuit 3 according to the thirdembodiment of the present invention will be described. In the following,three particular cases are shown as examples. Case 1 shows the operationof the tolerant input circuit 3 when L level (e.g. data ‘0’) is inputtedto the input pad PADI. Case 2 shows the operation of the tolerantcircuit 3 when H level (e.g. data ‘1’) is inputted to the input padPADi. Case 3 shows the operation of the tolerant circuit 3 when theexternal power supply voltage VTT which is higher than the internalpower supply voltage VDDIO is inputted to the input pad PADi.

Case 1

First, the operation of the tolerant input circuit 3 when L level (e.g.data ‘0’) is inputted to the input pad PADi will be described.

In this operation, L level is inputted to the inverter 82 via theresistor 68 and the N-MOS transistor 81. Therefore, the inverter 82outputs H level, and the two-input NAND circuit 61 outputs L level.Thereby, L level is inputted to the gate of the P-MOS transistor 65W viathe transfer gate 50, and the P-MOS transistor 65W is turned on. Inaddition, the output terminal V outputs the output of the inverter 82,i.e. L level.

At this point, as mentioned above, the P-MOS transistor 65W in thisembodiment has the low driving force. Therefore, even if the input padPADi becomes the high impedance state for instance, only a slight amountof current will flow through the P-MOS transistor 65W having the lowdriving force. Accordingly, only a slight amount of current flows fromthe internal power supply voltage VDDIO to the input pad PADi via theP-MOS transistor 65W, and thereby the input pad PADi can be slowlypulled up to the potential of the internal power supply voltage VDDIO.

Case 2

Next, the operation of the tolerant input circuit 3 when H level (e.g.data ‘1’) is inputted to the input pad PADi will be described.

In this operation, H level is inputted to the inverter 82 via theresistor 68 and the N-MOS transistor 81. Therefore, the inverter 82outputs L level, and the two-input NAND circuit 61 outputs H level.Thereby, H level is inputted to the gate of the P-MOS transistor 65W,and the P-MOS transistor 65W is turned off. In addition, the outputterminal Y outputs the output of the inverter 82, i.e. H level.

Case 3

Next, the operation of the tolerant input circuit 3 when the externalpower supply voltage VDDIO is inputted to the input pad PADi will bedescribed.

In this operation, H level is inputted to the inverter 82 via theresistor 68 and the N-MOS transistor 81. Therefore, the inverter 82outputs L level, and the two-input NAND circuit 61 outputs H level.Thereby, H level is inputted to the gate of the P-MOS transistor 65W,and the P-MOS transistor 65W is turned off. In addition, the outputterminal Y outputs the output of the inverter 83, i.e. H level.

Even in such case, by connecting the P-MOS transistor 65W having the lowdriving force between the internal power supply voltage VDDIO and theinput pad PADi, a slight amount of current will flow through it.Therefore, since the gate and the floating well of the P-MOS transistor65W are charged to VTT level, even if the external power supply voltageVTT which is higher than the internal power supply voltage VDDIO isimpressed to the input pad PADi for instance, the P-MOS transistor 65Wis kept turned off. Accordingly, the current does not flow from theinput pad PADI to the side of the internal power supply voltage VDDIOvia the P-MOS transistor 65W, and thereby an increase in powerconsumption can be prevented.

In addition, since the source potential, the drain potential and thewell potential of the P-MOS transistor 64 are all at VTT level when thepotential of the node pg becomes at VTT level, the P-MOS transistor 64is turned off.

As described above, according to the third embodiment of the presentinvention, the P-MOS transistor 65W having the low driving force isconnected between the internal power supply voltage VDDIO and the inputpad PADi. With this structure, even if the input pad PADi becomes thehigh impedance state for instance, a slight amount of current will flowthrough the P-MOS transistor 65W having the low driving force.Therefore, only a slight amount of current flows from the internal powersupply voltage VDDIO to the input pad PADi via P-MOS transistor 65W, andthereby the input pad PADi can be pulled up slowly to the potential ofthe internal power supply voltage VDDIO.

Moreover, according to the third embodiment of the present Invention, asmentioned above, the P-MOS transistor 65W having the low driving forceis connected between the internal power supply voltage VDDIO and theinput pad PADi. With this structure, only a slight amount of currentwill flow through the P-MOS transistor 65W. Therefore, since the gateand the floating well of the P-MOS transistor 65W are charged to VTTlevel, even if the external power supply voltage VTT which is higherthan the internal power supply voltage VDDIO is impressed to the inputpad PADi, the P-MOS transistor 65W is kept turned off. Accordingly, thecurrent does not flow from the input pad PADI to the side of theinternal power supply voltage VDDIO via the P-MOS transistor 65W, andthereby an increase in power consumption can be prevented.

Furthermore, according to the third embodiment of the present invention,the internal power supply voltage. VDDIO is impressed to the node bias,i.e. the gate of the P-MOS transistor 64, and thereby the P-MOStransistor 64 is kept turned off. With this structure, even if thepotential of the input pad PADi becomes the middle potential after theexternal power supply voltage VTT which is higher than the internalpower supply voltage VDDIO is impressed to the input pad PADi, thecurrent does not flow from the internal power supply voltage VDDIOimpressed to the two-input NAND circuit 61 to the input pad PADi via thetransfer gate 50, the P-MOS transistor 64 and the resistor 68. Thereby,an increase in power consumption can be prevented.

In addition, according to this embodiment of the present invention, thetolerant input circuit which realizes the above effects can be realizedwith a smaller number of circuit elements.

Fourth Embodiment

Next, a fourth embodiment of the present invention will be describedwith reference to the drawings. In the following, as for the structurethat are the same as the first, second or third embodiment, the samereference numbers will be used, and redundant explanations of thosestructure elements will be omitted.

In this embodiment an interactive circuit (it is also an input/outputcircuit) constructed from the tristate output circuit 1 according to thefirst embodiment of the present invention and the tolerant input circuit3 according to the third embodiment of the present invention will bedescribed.

Structure

FIG. 5 is an equivalent circuit diagram showing a structure of aninteractive circuit 4 according to the fourth embodiment of the presentinvention. As shown in FIG. 5, the interactive circuit 4 has thetristate output circuit 1 in the first embodiment and the tolerant inputcircuit 3 in the third embodiment. In the interactive circuit 4, theoutput pad PADo of the tristate output circuit 1 and the input pad PADiof the tolerant input circuit 3 are connected. In addition, theconnection of the output pad PADo and the input pad PADi functions as aninput/output pad PAD.

The structure of the tristate output circuit 1 is the same as in thecase of the first embodiment. The structure of the tolerant inputcircuit 3 is the same as in the case of the third embodiment.Accordingly, the redundant explanations of those structure elements willbe omitted.

Operation

The operation of the tristate output circuit 1 in this embodiment is thesame as the first embodiment of the present invention, and redundantexplanations of this operation will be omitted. In addition, when thetolerant input circuit 3. operates for instance, the enable signal oe isset to be at L level. Thereby, the operation of the tristate outputcircuit 1 and the operation of the tolerant input circuit 3 can beseparated. Moreover, the operation of the tolerant input circuit 3 inthis embodiment is the same as the third embodiment of the presentinvention, and redundant explanations of this operation will be omitted.

As described above, according to the fourth embodiment of the presentinvention, the tristate output circuit 1 according to the firstembodiment of the present invention and the tolerant input circuit 3according to the third, embodiment of the present invention is combined.With this structure, the interactive circuit 4 which realizes theeffects of the tristate output circuit 1 and the tolerant input circuit3 can be obtained.

Fifth Embodiment

Next, a fifth embodiment of the present invention will be described withreference to the drawings. In the following, as for the structure thatare the same as the first, second, third or fourth embodiment, the samereference numbers will be used, and redundant explanations of thosestructure elements will be omitted.

In this embodiment, an interactive circuit (it is also an input/outputcircuit) constructed from the tristate output circuit 2 according to thesecond embodiment of the present invention and the tolerant inputcircuit 3 according to the third embodiment of the present inventionwill be described.

Structure

FIG. 6 is an equivalent circuit diagram showing a structure of aninteractive circuit 5 according to the fifth embodiment of the presentinvention. As shown in FIG. 6, the interactive circuit 5 has thetristate output circuit 2 in the second embodiment and the tolerantinput circuit 3 in the third embodiment. In the interactive circuit 5,the output pad PADo of the tristate output circuit 2 and the input padPADi of the tolerant input circuit 3 are connected. In addition, theconnection of the output pad PADo and the input pad PADi functions as aninput/output pad PAD.

The structure of the tristate output circuit 2 is the same as in thecase of the second embodiment. The structure of the tolerant inputcircuit 3 is the same as in the case of the third embodiment.Accordingly, the redundant explanations of those structure elements willbe omitted.

Operation

The operation of the tristate output circuit 2 in this embodiment is thesame as the second embodiment of the present invention, and redundantexplanations of this operation will be omitted. In addition, when thetolerant input circuit 3 operates for instance, the enable signal oe isset to be at L level. Thereby, the operation of the tristate outputcircuit 2 and the operation of the tolerant input circuit 3 can beseparated. Moreover, the operation of the tolerant input circuit 3 inthis embodiment is the same as the third embodiment of the presentinvention, and redundant explanations of this operation will be omitted.

As described above, according to the fifth embodiment of the presentinvention, the tristate output circuit 2 according to the secondembodiment of the present invention and the tolerant input circuit 3according to the third embodiment of the present invention is combined.With this structure, the interactive circuit 4 which realizes theeffects of the tristate output circuit 2 and the tolerant input circuit3 can be obtained.

Sixth Embodiment

Next a sixth embodiment of the present invention will be described withreference to the drawings. In the following, as for the structure thatare the same as the first, second, third, fourth or sixth embodiment,the same reference numbers will be used, and redundant explanations ofthose structure elements will be omitted.

The interactive circuits 4 to 8 according to the fourth to sixthembodiments are mounted in the semiconductor input/output device 9formed into 1 chip shown in FIGS. 7A and 7B. As shown in FIGS. 7A and7B, the semiconductor input/output device 9 can be combined with asemiconductor input/output device 109 with which an interactive circuit104 constructed from a conventional input circuit 101 and a conventionaloutput circuit 103 is mounted or a semiconductor input/output device 110with which a conventional input circuit 101 is mounted.

While the preferred embodiments of the invention have been describedusing specific terms, such description is for illustrative purposesonly, and it is to be understood that changes and variations may be madewithout departing from the spirit or the scope of the following claims.

This application claims priority to Japanese Patent Application No.2004-339880. The entire disclosures of Japanese Patent Application No.2004-339880 is hereby incorporated herein by reference.

While only selected embodiments have been chosen to illustrate thepresent invention, it will be apparent to those skilled in the art fromthis disclosure that various changes and modifications can be madeherein without departing from the scope of the invention as defined inthe appended claims. Furthermore, the foregoing descriptions of theembodiments according to the present invention are provided forillustration only, and not for the purpose of limiting the invention asdefined by the appended claims and their equivalents. Thus, the scope ofthe invention is not limited to the disclosed embodiments.

The term “configured” as used herein to describe a component, section orpart of a device includes hardware and/or software that is constructedand/or programmed to carry out the desired function.

Moreover, terms that are expressed as “means-plus function” in theclaims should include any structure that can be utilized to carry outthe function of that part of the present invention.

The terms of degree such as “substantially,” “about,” and“approximately” as used herein mean a reasonable amount of deviation ofthe modified term such that the end result is not significantly changed.For example, these terms can be construed as including a deviation of atleast ±5% of the modified term if this deviation would not negate themeaning of the word it modifies.

1. An input/output circuit comprising: an output terminal; a firsttransistor driving the output terminal based on a predetermined signal;a second transistor controlling a potential of the gate of the firsttransistor; a bias circuit generating a bias voltage for controlling thesecond transistor based on the level of the predetermined signal, andimpressing the bias voltage to the gate of the second transistor; and athird transistor switching a voltage which is impressed to the gate ofthe second transistor based on a potential of the output terminal. 2.The input/output circuit according to claim 1, wherein the first andsecond transistors are p-type transistors, and the level of the biasvoltage is lower than an operational potential.
 3. The input/outputcircuit according to claim 1, wherein the first and second transistorsare p-type transistors, the bias circuit comprises two n-typetransistors which are connected between an operational potential and thegate of the second transistor, and the potential of the bias voltage islower than an operational potential by threshold voltages of the twon-type transistors.
 4. The input/output circuit according to claim 1,wherein the third transistor impresses an internal potential to the gateof the second transistor when the potential of the output terminal islower than the internal potential.
 5. The input/output circuit accordingto claim 1, further comprising: a fourth transistor of n-type drivingthe output terminal based on the predetermined signal; and a fifthtransistor of n-type set up between the fourth transistor and the outputterminal.
 6. The input/output circuit according to claim 1, furthercomprising: a floating well charging circuit for charging a floatingwell of the second transistor based on a potential of the outputterminal, the second transistor being formed on the floating well of apredetermined semiconductor substrate.